MIM capacitor and method of manufacturing the same

ABSTRACT

Provided are MIM capacitor and method of manufacturing the same. The MIM capacitor includes a first electrode, a second electrode, a third electrode, a first insulating layer, a second insulating layer, and a first spacer. The first electrode and the third electrode are electrically connected to each other. The first insulating layer is between the first electrode and the second electrode. The second insulating layer is between the second electrode and the third electrode. The first spacer is located between a sidewall of the first electrode and the first insulating layer.

BACKGROUND

In the integrated circuits, MIM capacitors are components used for datastorage applications. Various capacitive structures are applied in theintegrated circuits. These structures include metal-oxide-semiconductor(MOS) MIM capacitors, p-n junction MIM capacitors andmetal-insulator-metal (MIM) capacitors. Generally, the MIM capacitorsexhibit improved frequency and temperature characteristics and atopology of a MIM capacitor simplifying planarization in themanufacturing processes.

The MIM capacitors have been widely used in functional circuits such asmixed-signal circuits, analog circuits, radio frequency (RF) circuits,dynamic random access memories (DRAMs), embedded DRAMs and logicoperation circuits. Therefore, there are constant needs for a method offorming a MIM capacitor to provide a MIM capacitor with improvedreliability.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A to FIG. 1J are schematic cross-sectional views illustrating amethod of manufacturing a MIM capacitor according to an embodiment ofthe disclosure.

FIG. 2A to FIG. 2C are schematic cross-sectional views respectivelyillustrating an enlarged view of a MIM capacitor according to someembodiments of the disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a second feature over or on a first feature in the description thatfollows may include embodiments in which the second and first featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the second and first features,such that the second and first features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath”, “below”, “lower”,“on”, “above”, “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the FIGS. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe FIGS. The apparatus may be otherwise oriented (rotated 90 degrees orat other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

FIG. 1A to FIG. 1J are schematic cross-sectional views illustrating amethod of manufacturing a metal-insulator-metal (MIM) capacitoraccording to some embodiments of the disclosure.

Referring to FIG. 1A, a substrate 10 is provided. In some embodiments,the substrate 10 is a semiconductor substrate such as a siliconsubstrate. The substrate 10 is, for example, a bulk silicon substrate, adoped silicon substrate, an undoped silicon substrate, or asilicon-on-insulator (SOI) substrate. The dopant of the doped siliconsubstrate may be an N-type dopant, a P-type dopant or a combinationthereof. The substrate 10 may also be formed by other semiconductormaterials. The other semiconductor materials include but are not limitedto silicon germanium, silicon carbide, gallium arsenide, or the like.The substrate 10 includes active areas and isolation structures (notshown). In some embodiments, the substrate 10 includes a first region 10a and a second region 10 b. In some embodiments, the first region 10 ais a region on which a capacitor is to be formed. The first region 10 amay be a capacitor region. The second region 10 b is, for example, alogic region. However, the disclosure is not limited thereto.

In some embodiments, a structure 11 is formed on the substrate 10. Thestructure 11 includes integrated circuit devices, an inter-layerdielectric (ILD) layer, an interconnect structure, one or moreinter-metal dielectric (IMD) layers or/and a dielectric layer 12. Forthe sake of brevity, only a conductive line 15 of the interconnectstructure and the dielectric layer 12 aside the conductive line 15 ofthe structure 11 are specifically shown, and other components of thestructure 11 are not specifically shown in FIG. 1.

In some embodiments, integrated circuit devices are formed on the activeareas of the substrate 10. The integrated circuit devices may be activedevices, passive devices or a combination thereof. The integratedcircuit devices are, for example, transistors, MIM capacitors,resistors, diodes, photodiodes, fuse devices, or other similar devices.The transistors are, for example, metal-oxide-semiconductor field effecttransistor (MOSFET) or fin-type field effect transistor (finFET).

The ILD layer may include a single layer or multiple layers, and mayinclude silicon oxide, silicon nitride, silicon oxynitride or a low-kdielectric material. The IMD layer is formed on the ILD layer. The IMDlayer may include a single layer or multi layers, and may include alow-k dielectric material, a nitride such as silicon nitride, an oxidesuch as silicon oxide, tetraethosiloxane (TEOS), high-density plasma(HDP) oxide, plasma-enhanced TEOS (PETEOS), spin-on glass (SOG),fluorinated silicate glass (FSG), undoped silicate glass (USG),phosphosilicate glass (PSG), borosilicate glass (BSG), boron-dopedphosphosilicate glass (BPSG), a combination thereof or the like.

The interconnect structure is formed in the ILD layer and the IMD layerand connected to different integrated circuit devices to form afunctional circuit. In some embodiments, the interconnect structureincludes multiple layers of metal lines and plugs. The metal lines andplugs include conductive materials. The plugs include contact plugs andvia plugs. The contact plugs are located in the ILD to connect the metallines to the integrated circuit devices. The via plugs are located inthe IMD to be connected to the metal lines in different layers.

In some embodiments, the conductive line 15 is a top metal line of theinterconnect structure and is electrically connected to the integratedcircuit devices. However, the disclosure is not limited thereto, theconductive line 15 may be any one of the conductive lines of theinterconnect structure. In some embodiments, the conductive line 15includes a barrier layer 13 and a conductive layer 14. The barrier layer13 may be a single-layer or a multi-layer structure. The material of thebarrier layer 13 includes metal, metal nitride, or a combinationthereof. The material of the barrier layer 13 is, for example, titanium,titanium nitride, tantalum nitride, or a combination thereof. Theconductive layer 14 includes, for instance, copper or other suitablemetal. In some embodiments, the bottom surface and the sidewalls of theconductive layer 14 are surrounded and covered by the barrier layer 13.The conductive line 15 is formed in the dielectric layer 12. In otherwords, the dielectric layer 12 is aside the conductive line 15 to coverthe sidewalls of the conductive line 15. The material of the dielectriclayer 12 may be the same as or different from the material of the IMDlayer. In some embodiments, the dielectric layer 12 may be a portion ofthe IMD layer. In some embodiments, the top surface of the dielectriclayer 12 is substantially coplanar with the top surface of theconductive line 15.

Still referring to FIG. 1A, a dielectric structure 18 is formed on theconductive line 15 and the dielectric layer 12. The dielectric structure18 includes dielectric materials, such as silicon oxide,tetraethylorthosilicate (TEOS) silicon oxide, silicon nitride, siliconoxynitride, undoped silicon glass (USG), plasma enhanced oxide(PEOX)-USG, borophosphosilicate glass (BPSG), phosphosilicate glass(PSG), a low-k material having a dielectric constant less than 4 or acombination thereof. The low-k material includes fluorine-doped siliconglass (FSG), hydrogen silsesquioxnane (HSQ), methyl silsesquioxane(MSQ), hybrido-organo siloxane polymer (HOSP); aromatic hydrocarbon suchas SiLK; parylene; fluoro-polymer such as PFCB, CYTOP, Teflon;organosilicate glass such as black diamond (BD), 3MS, 4MS;poly(arylethers); porous polymer such as XLK, Nanofoam, Awrogel; Coraloror the like.

The dielectric structure 18 may be a single-layer structure or amulti-layer structure. In some embodiments, the dielectric structure 18is a multi-layer structure and includes a first dielectric layer 16 anda second dielectric layer 17. The material of the first dielectric layer16 and the material of the second dielectric layer 17 may be the same ordifferent. In some embodiments, the first dielectric layer 16 and thesecond dielectric layer 17 includes different materials, and the firstdielectric layer 16 may serve as an etching stop layer in subsequentprocesses. The method of forming the first dielectric layer 16 and thesecond dielectric layer 17 includes chemical vapor deposition (CVD)process or spin-coating process. In some embodiments, the firstdielectric layer 16 includes silicon nitride or silicon oxynitride, andthe second dielectric layer 17 includes oxide such as silicon oxide orUSG.

Still referring to FIG. 1A, a first conductive layer 19 is formed on thedielectric structure 18. The first conductive layer 19 may be asingle-layer structure or a multi-layer structure. The first conductivelayer 19 may include various conductive materials, such as a metal, ametal alloy, a metal nitride, a metal silicide, a metal oxide, grapheneor a combination thereof. For example, the first conductive layer 19 mayinclude aluminum (Al), titanium (Ti), copper (Cu), tungsten (W),platinum (Pt), palladium (Pd), osmium (Os), ruthenium (Ru), tantalum(Ta), or an alloy thereof, titanium nitride (TiN), tantalum nitride(TaN), tungsten nitride (WN), molybdenum nitride (MoN), TaSiN, TiSiN,WSiN, tungsten silicide, titanium silicide, cobalt silicide, zirconiumsilicide, platinum silicide, molybdenum silicide, copper silicide,nickel silicide, indium tin oxide (ITO), iridium oxide (IrO₂), rheniumoxide (ReO₂), rhenium trioxide (ReO₃), or a combination thereof.

In some embodiments, the first conductive layer 19 includes a pluralityof first conductive patterns 19 a spaced from each other on the topsurface of the dielectric structure 18. The first conductive layer 19may be formed by the following processes: a conductive material layer(not shown) is at first formed on the dielectric structure 18 by asuitable technique such as a physical vapor deposition (PVD) process.Thereafter, the conductive material layer is patterned byphotolithography and etching processes to form the first conductivepatterns 19 a. In some embodiments, the thickness T1 of the firstconductive layer 19 may be in a range of 300 Å to 500 Å. In anembodiment, the thickness T1 is 400 Å. However, the disclosure is notlimited thereto.

In some embodiments, the cross-section shape of the first conductivepattern 19 a is square, rectangle, trapezoid, or the like. The sidewallof the first conductive pattern 19 a may be straight, arced or inclined.In some embodiments, the first conductive patterns 19 a are alsoreferred as a first electrode 19 a.

Referring to FIG. 1B, a spacer material layer 20 is formed on the firstconductive layer 19 and the dielectric structure 18. In someembodiments, the spacer material layer 20 is a single-layer structureand comprises a dielectric material. In some other embodiments, thespacer material layer 20 is a multi-layer structure and may comprise adielectric material, a conductive material or a combination thereof. Themulti-layer structure may include a dielectric layer and a conductivelayer formed sequentially. In some embodiments, the spacer materiallayer 20 includes oxide such as silicon oxide, nitride such as siliconnitride, oxynitride such as silicon oxynitride, oxide-nitride-oxide(ONO) structure, TiN, or a combination thereof. The spacer materiallayer 20 may be formed by a CVD process, PVD process, spin coatingprocess or the like.

Referring to FIG. 1B and FIG. 1C, an etching process such as ananisotropic etching process is performed on the spacer material layer 20to form spacers 20 a on sidewalls of the first conductive layer 19. Insome embodiments in which the spacer material layer 20 is a multi-layerstructure including a dielectric layer and a conductive layer, thedielectric layer serves as an etching stop layer during the etchingprocess.

The spacer 20 a covers the sidewall of the first conductive layer 19 anda portion of the top surface 18 a of the dielectric structure 18. Thecross-section shape of the spacer 20 a may be fan-shaped, triangle, orthe like of a combination thereof. The sidewall 22 of the spacer 20 amay be arced, inclined or curved. In some embodiments, the slope of thesidewall 22 is very gentle. In some embodiments, the sidewall 22 of thespacer 20 a includes non-single slope. For example, the slope of thesidewall 22 of the spacer 20 a changes gradually from top to bottom,such as gradually increased from top to bottom. In some embodiments, thebase angle of the spacer 20 a is less than the base angle of the firstconductive layer 19. In some embodiments, the height H1 of the spacer 20a is equal to or less than the thickness T1 of the first electrode 19 a,and ranges from 300 Å to 500 Å. The width W1 of the spacer 20 a rangesfrom 200 Å to 400 Å, for example.

In some embodiments, the first electrode 19 a and the spacers 20 a onsidewalls of the first electrode 19 a form a first electrode structure50. However, the disclosure is not limited thereto. The spacers 20 a maybe optionally formed. That is to say, in some other embodiments, thefirst electrode structure 50 may just include the first electrode 19 a,and no spacer is formed on sidewalls of the first electrode 19 a. Theembodiment in which no spacer is formed on sidewalls of the firstelectrode is shown in FIG. 2B and will be described below.

Referring to FIG. 1D, a first insulating layer 24 (also referred as adielectric layer) is formed on the first conductive layer 19, thespacers 20 a and the dielectric structure 18 by, for example, a CVDprocess, spin coating process, an atomic layer deposition (ALD) process.The first insulating layer 24 includes oxide, nitride, oxynitride, ahigh-k dielectric material or a combination thereof. The firstinsulating layer 24 includes, for example, silicon oxide, siliconnitride, silicon oxynitride, an oxide-nitride-oxide (ONO) structure, ahigh-k dielectric material having a dielectric constant greater thanthat of silicon oxide, or a combination thereof. In some embodiments,the dielectric constant of the high-k dielectric material is greaterthan 4, greater than 7 or even greater than 10. The high-k dielectricmaterial may include hafnium oxide (HfO2), hafnium silicate (HfSiO₄),hafnium silicon oxynitride (HfSiON), aluminum oxide (Al₂O₃), yttriumoxide (Y₂O₃), lanthanum oxide (La₂O₃), lanthanum aluminum oxide (LaAlO),tantalum oxide (Ta₂O₅), titanium oxide (TiO₂), zirconium oxide (ZrO₂),zirconium silicon oxide (ZrSiO₄), hafnium zirconium oxide (HfZrO),strontium bismuth tantalite (SrBi₂Ta₂O₉, SBT) or a combination thereof.In some embodiments, the thickness of the first insulating layer 24ranges from 50 Å to 100 Å. In an embodiment, the thickness of the firstinsulating layer 24 is 60 Å.

The first insulating layer 24 may be a single-layer structure or amulti-layer structure. In some embodiments, the first insulating layer24 is a three-layer structure consisting of ZrO₂, Al₂O₃ and ZrO₂sequentially, and the thickness of each layer of the three-layerstructure may be the same or different. In an embodiment, the thicknessof each layer of the three-layer structure is 20 Å.

In some embodiments, the first insulating layer 24 is conformal with thefirst electrode structure 50 and the dielectric structure 18. As spacers20 a are formed on the sidewalls of the first electrode 19 a, the cornerthinning issue of the first insulating layer 24 is avoided, and thefirst insulating layer 24 has a uniform thickness extending on thesurface of the first electrode structure 50 and the dielectric structure18. In other words, the first insulating layer 24 includes a firstportion 24 a on the top surface of first electrode 19 a, a secondportion 24 b on sidewalls of the spacer 20 a and a third portion 24 c onthe top surface of the dielectric structure 18. The thickness Ta of thefirst portion 24 a and the thickness Tc of the third portion 24 c aresubstantially the same as each other. Further, the thickness Tb of thesecond portion 24 b and the thickness Td of the corner A1 of the firstinsulating layer 24 are substantially the same as the thickness Ta orTb. The corner A1 refers to the portion of the first insulating layer 24on the corner between the spacer 20 a and the top surface of thedielectric structure 18. In some embodiments, the thickness differencebetween the thickness Tb and the thickness Ta/Tc ranges from 0 to 10 Å,for example. The thickness difference between the thickness Td and thethickness Ta/Tc ranges from 0 to 10 Å, for example.

Referring to FIG. 1E, a second conductive layer 25 is formed on thefirst insulating layer 24. In some embodiments, the second conductivelayer 25 is conformal with the first insulating layer 24. The materialand the forming method of the second conductive layer 25 are similar tothose of the first conductive layer 19, which is not described again.The thickness and the material of the second conductive layer 25 may bethe same as or different from those of the first conductive layer 19,respectively.

In some embodiments, the second conductive layer 25 includes secondconductive patterns 25 a and one or more second conductive patterns 25b. The second conductive patterns 25 a and second conductive patterns 25b are electrically separated from each other. In some embodiments, thesecond conductive patterns 25 a are referred as a second electrode, andare formed on the first region 10 a of the substrate 10. In someembodiments, the second conductive patterns 25 a include a stepstructure. In other words, a portion of the second conductive pattern 25a is located on the first conductive pattern 19 a, and other portion ofthe second conductive pattern 25 a is located at sides of the conductivepattern 19 a. The second conductive patterns 25 b are formed on thesecond region 10 b of the substrate 10 and disconnected to the firstconductive patterns 25 a.

In some embodiments, an opening 26 is formed between the secondconductive patterns 25 a and over the first conductive pattern 19 a. Theopening 26 exposes a portion of the top surface of the first insulatinglayer 24 on the first conductive pattern 19 a. An opening 27 is formedbetween the second conductive pattern 25 a and the second conductivepattern 25 b. The opening 27 exposes a portion of the top surface of thefirst insulating layer 24 on the dielectric structure 18.

Referring to FIG. 1F, processes similar to those of FIG. 1B to FIG. 1Dare performed, so as to form spacers 28 on sidewalls of the secondconductive layer 25, and a second insulating layer 29 is then formedover the substrate 10. The second insulating layer 29 conformally coversthe second conductive layer 25, the spacers 28 and the first insulatinglayer 24. Herein, the word “conformally” means the second insulatinglayer 29 has a uniform thickness extending on the second conductivelayer 25, the spacers 28 and the first insulating layer 24. Similar tothe first insulating layer 24, the second insulating layer 29 has afirst portion 29 a, a second portion 29 b and a third portion 29 cconnected to each other. The first portion 29 a and the third portion 29c are extending along a direction parallel to the top surface of thesubstrate 10 and have the same thickness T10. The second portion 29 b ison the sidewalls of the spacers 28 and between the first portion 29 aand the third portion 29 c. The thickness T11 of the second portion 29 bis substantially the same as the thickness T10 of the first portion 29 aor the third portion 29 c. Further, the thickness T12 of the corner A2of the second insulating layer 29 is substantially the same as thethickness T10. Herein, the corner A2 of the second insulating layer 29refers to the portion of the second insulating layer 29 on the cornerbetween the spacer 28 and the second conductive layer 25, or the cornerbetween the spacer 28 and the first insulating layer 24, or the cornerbetween the spacers 28. In some embodiments, the thickness differencebetween the thickness T11 and the thickness T10 ranges from 0 to 10 Å,for example. The thickness difference between the thickness T12 and thethickness T10 ranges from 0 to 10 Å, for example.

In some embodiments, the second electrode 25 a and the spacers 28 onsidewalls of the second electrode 25 a form a second electrode structure52. The second electrode structure 52 is stacked on the first electrodestructure 50, and is electrically isolated from the first electrodestructure 50 by the first insulating layer 24 therebetween.

Referring to FIG. 1G, a third conductive layer 30 is formed on thesecond insulating layer 29. The material and the forming method of thethird conductive layer 30 are similar to those of the second conductivelayer 25, which is not described again.

In some embodiments, the third conductive layer 30 includes thirdconductive patterns 30 a, 30 b and 30 c. The third conductive patterns30 a and 30 b are formed on the first region 10 a of the substrate 10,and the third conductive pattern 30 c is formed on the second region 10b of substrate 10. In some embodiments, the third conductive patterns 30a are referred as a third electrode. The third conductive pattern 30 bis located between and separated from the third conductive patterns 30a, and serve as a dummy pattern in subsequent processes.

Openings 31 are formed between the third conductive pattern 30 a and thethird conductive pattern 30 b. In some embodiments, the openings 31penetrates through the third conductive layer 30 and expose a portion ofthe top surface of the second insulating layer 29 on the secondelectrode 25 a. An opening 32 is formed between the third conductivepattern 30 a and the third conductive pattern 30 c. The opening 32penetrates through the third conductive layer 30 and exposes a portionof the top surface of the second insulating layer 29 on the firstinsulating layer 24.

In some embodiments, the third electrode 30 a is also referred as athird electrode structure 54. The third electrode structure 30 a isstacked on the second electrode structure 52, and is electricallyisolated from the second electrode structure 52 by the second insulatinglayer 29 therebetween.

Sill referring to FIG. 1G, a dielectric layer 34 is formed on the thirdconductive layer 30. The dielectric layer 34 covers the surface of thethird conductive layer 30 and fills into the openings 31 and 32. Thematerial of the dielectric layer 34 is similar to the material of thedielectric layer 12 or the material of the dielectric structure 18,which is not described again. The material of the dielectric layer 34may be the same as or different from the material of the dielectriclayer 12 or the material of the dielectric structure 18.

Referring to FIG. 1G and FIG. 1H, the dielectric layer 34, the thirdconductive layer 30, the second insulating layer 29, the secondconductive layer 25, the first insulating layer 24, the first conductivelayer 19 and the dielectric structure 18 are patterned by a patterningprocess, so as to form a plurality of contact holes 35 a, 35 b and 35 cexposing portions of top surfaces of the conductive line 15. Thepatterning process includes photolithography and one or more etchingprocesses, for example. During the etching process, the first dielectriclayer 16 of the dielectric structure 18 may serve as an etching stoplayer, after the etching process is performed until the first dielectriclayer 16 is exposed, the etching process is further performed to removethe dielectric layer 16 to expose the top surface of the conductive line15.

The contact hole 35 a penetrates through the dielectric layer 34, thethird electrode 30 a, the second insulating layer 29, the firstinsulating layer 24, the first electrode 19 a and the dielectricstructure 18. The bottom of the contact hole 35 a exposes the topsurface of the conductive line 15.

The contact hole 35 b penetrates through the dielectric layer 34, thedummy pattern 30 b, the second insulating layer 29, the second electrode25 a, the first insulating layer 24, and the dielectric structure 18.The bottom of the contact hole 35 b exposes the top surface of theconductive line 15. In some embodiments, the contact hole 35 b islocated between the openings 31.

The contact hole 35 c penetrates through the dielectric layer 34, thethird conductive pattern 30 c, the second insulating layer 29, thesecond conductive pattern 25 b, the first insulating layer 24, and thedielectric structure 18. The bottom of the contact hole 35 c exposes thetop surface of the conductive line 15.

During the etching processes, as the dummy pattern 30 b (which iselectrically isolated from the third electrode 30 a) is provided, thenumber of the conductive layers need to be etched for forming thecontact holes 35 a, 35 b and 35 c are substantially the same, further,the number of the dielectric or insulating layers need to be etched forforming the contact holes 35 a, 35 b and 35 c are also the same. That isto say, the etching environment for forming the contact holes 35 a, 35 band 35 c are substantially the same as each other, therefore, the issueof loading effect is thus avoided.

Referring to FIG. 1I, a plurality of contacts 38 a, 38 b and 38 c areformed on the conductive line 15. The contacts 38 a, 38 b and 38 c fillin the contact holes 35 a, 35 b, 35 c and cover a portion of the topsurface of the dielectric layer 34, respectively. In some embodiments,the contacts 38 a, 38 b and 38 c respectively include a barrier layer 36and a conductive layer 37. The materials of the barrier layer 36 and theconductive layer 37 are respectively similar to those of the barrierlayer 13 and the conductive layer 14, which are not described again. Insome embodiments, the materials of the barrier layer 36 and theconductive layer 37 are respectively the same as or different from thoseof the barrier layer 13 and the conductive layer 14. The barrier layer36 and the conductive layer 37 may be formed by the following processes:a barrier material layer (not shown) and a conductive material layer(not shown) are sequentially formed on the dielectric layer 34 by, forexample, a PVD process, the barrier material layer and the conductivematerial layer cover the top surface of the dielectric layer 34, andfill into the contact holes 35 a, 35 b and 35 c. Thereafter, the barriermaterial layer and the conductive material layer are patterned byphotolithography and etching processes.

In some embodiments, the conductive line 15 includes the conductivelines 15 a, 15 b and 15 c. The contact 38 a is in electrical contactwith the conductive line 15 a, the first electrode 19 a and the thirdelectrode 30 a. The contact 38 b is in electrical contact with theconductive line 15 b and the second electrode 25 a. The contact 38 c isin electrical contact with the conductive line 15 c, the secondconductive pattern 25 b and the third conductive pattern 30 c. Theconductive line 15 a and the conductive line 15 b are electricallyisolated from each other. In some embodiments, the conductive line 15 cis electrically isolated from the conductive line 15 a or 15 b, but thedisclosure is not limited thereto.

Referring to FIG. 1I, a MIM capacitor 100 a is thus completed. In someembodiments, the MIM capacitor 100 a includes the first electrodestructure 50, the second electrode structure 52, the third electrodestructure 54, the first insulating layer 24, the second insulating layer29, and the contacts 38 a and 38 b. The first electrode structure 50includes the first electrode 19 a and spacers 20 a on sidewalls of thefirst electrode 19 a. The second electrode structure 52 includes thesecond electrode 25 a and the spacers 28 on sidewalls of the secondelectrode 25 a. The third electrode structure 54 includes the thirdelectrode 30 a. In some embodiments, the materials and the thicknessesof the first electrode structure 50, the second electrode structure 52and the third electrode structure 54 may be the same or different. Thematerials and the thicknesses of the first insulating layer 24 and thesecond insulating layer 29 may be the same or different.

The contact 38 a penetrates through the third electrode 30 a and thefirst electrode 19 a to connect to the conductive line 15. That is tosay, the third electrode 30 a and the first electrode 19 a areelectrically connected to the conductive line 15 through the contact 38a.

The contact 38 b penetrates through the third conductive pattern 30 band the second electrode 25 a to connect to the conductive line 15.Because the third conductive pattern 30 b is a dummy pattern which iselectrically isolated from the third electrode 30 a, therefore, thecontact 38 b is electrically isolated from the third electrode 30 a. Inother words, the second electrode 25 a is electrically connected to theconductive line 15 through the contact 38 b.

In some embodiments, the contact 38 a connecting the first electrode 19a to the third electrode 30 a, and the contact 38 b connecting thesecond electrode 25 a are respectively connected to the conductive lines15 a and 15 b at the same side of the dielectric structure 18, but thedisclosure is not limited thereto. In some other embodiments, thecontact 38 a and the contact 38 b may be connected to conductive linesat different sides of the dielectric structure 18.

The contact 38 c penetrates through the third conductive pattern 30 cand the second conductive pattern 25 b to electrically connect to theconductive line 15 c. The third conductive pattern 30 c and the secondconductive pattern 25 b are electrically connected to the conductiveline 15 through the contact 38 c. In some embodiments, the contact 38 c,third conductive pattern 30 c and the second conductive pattern 25 b arecomponents formed on a logical region 10 b of the substrate 10, and areseparated from the MIM capacitor 100 a.

Referring to FIG. 1J, in some embodiments in which the conductive line15 is a top metal line of the interconnect structure, a passivationlayer 40 and a protection layer 41 are formed on the dielectric layer 34and the contacts 38 a, 38 b and 38 c. The material of the passivationlayer 40 includes a dielectric material such as silicon oxide, or apolymer. The material of the protection layer 41 includes a dielectricmaterial such as silicon nitride or a polymer. In some embodiments, thematerial of the protection layer 41 is different from the material ofthe passivation layer 40. The passivation layer 40 and the protectionlayer 41 may be formed by CVD processes.

A plurality of pad window 42 are formed in the passivation layer 40 andthe protection layer 41, so as to expose portions of the top surfaces ofthe contacts 38 a, 38 b and 38 c.

Still referring to FIG. 1J, a semiconductor device 200 is thuscompleted. The semiconductor device 200 includes the substrate 10, thestructure 11 including the conductive line 15 and the dielectric layer12, the MIM capacitor 100 a, the passivation layer 40 and the protectionlayer 41. In some embodiments, subsequent processes such as packingprocesses may be performed on the semiconductor device 200, and thecontacts 38 a, 38 b and 38 c may serve as external connections of thesemiconductor device 200. In this embodiment, the MIM capacitor 100 a isintegrated in the semiconductor device 200, but the disclosure is notlimited thereto.

FIG. 2A is an enlarged view of a MIM capacitor according to someembodiments of the disclosure. The MIM capacitor shown in FIG. 2A issimilar to the MIM capacitor 100 a, but may be in differentcross-section from that of the MIM capacitor 100 a as shown in FIG. 1J.For the sake of brevity, FIG. 2A merely illustrate the dielectricstructure 18 underlying the MIM capacitor, the first electrode structure50, the second electrode structure 52, the third electrode structure 54,the first insulating layer 24 and the second insulating layer 29.

Referring to FIG. 2A, the MIM capacitor 100 b is located on thedielectric structure 18. The MIM capacitor 100 b includes a firstelectrode structure 50, a first insulating layer 24, a second electrodestructure 52, a second insulating layer 29 and a third electrodestructure 54 stacked from bottom to top. The first insulating layer 24is located between and electrically isolates the first electrodestructure 50 and the second electrode structure 52. The secondinsulating layer 29 is located between and electrically isolates thesecond electrode structure 52 and the third electrode structure 54. Insome embodiments, the first electrode structure 50 and the thirdelectrode structure 54 are electrically connected to each other througha contact 38 a, and the second electrode structure 52 is electricallyconnected to a contact 38 b (shown in FIG. 1J).

In some embodiments, the first electrode structure 50 includes a firstelectrode 19 a and spacers 20 a on sidewalls of the first electrode 19a. In some embodiments, the cross-section shape of the first electrode19 a is square, rectangle, trapezoid, or the like. The sidewalls 21 ofthe first electrode 19 a may be straight, arced or inclined, and theopposite sidewalls 21 of the first electrode 19 a may be symmetric orasymmetric to each other. In other word, the first conductive pattern 19a includes base angles α, herein, the base angle α refers to theincluded angle between the sidewall 21 and the bottom surface of thefirst electrode 19 a. The base angle α is a right angle or an acuteangle. In some embodiments, the base angles α range from 70° to 90°. Thebase angles α between opposite sidewalls and the bottom surface of thefirst electrode 19 a may be the same as or different from each other.

The spacer 20 a is located on and covers the sidewalls 21 of the firstelectrode 19 a. In some embodiments, the bottom surface of the spacer 20a is substantially coplanar with the bottom surface of the firstelectrode 19 a. The cross-section shape of the spacer 20 a may befan-shaped, triangle, or the like or a combination thereof. The sidewall22 of the spacer 20 a may be arced, inclined or curved. The sidewall 22may include non-single slope or a very gentle slope. The slope of thesidewall 22 of the spacer 20 a may change gradually from top to bottom,such as increased gradually from top to bottom. In some embodiments, thebase angle β1 of the spacer 20 a is less than the base angle α of thefirst conductive layer 19. The base angle β1 of the spacer 20 a (thatis, the base angle of the first electrode structure 50) ranges from 45°to 60°, for example.

The first insulating layer 24 covers the top surface of the firstelectrode 19 a and sidewalls of the spacers 20 a of the first electrodestructure 50 and the top surface of the dielectric structure 18. In someembodiments, the first insulating layer 24 is conformal with theelectrode structure 50 and the dielectric structure 18.

In some embodiments, the first insulating layer 24 includes a firstportion 24 a, second portions 24 b and third portions 24 c connected toeach other. The first portion 24 a and the third portion 24 c areextending along a first direction D1 which is parallel to the topsurface of the dielectric structure 18. The first portion 24 a islocated on and covers the top surface of the first electrode 19 a. Thethird portion 24 c is located on and covers the top surface of thedielectric structure 18, and at sides of the first electrode 19 a. Insome embodiments, the bottom surface of the third portion 24 c issubstantially coplanar with the bottom surface of the first electrodestructure 50.

The second portions 24 b are located on the sidewalls 22 of the spacer20 a and between the first portion 24 a and the third portion 24 c, soas to cover the sidewalls 22 of the spacers 20 a and connect the firstportion 24 a to the third portion 24 c. In some embodiments, the secondportion 24 b is separated from the first electrode 19 a by the spacer 20a therebetween. The second portion 24 b is not perpendicular to the topsurface of the dielectric structure 18, and the cross-shape of thesecond portion 24 b may be arced, inclined, curved, or a combinationthereof. An included angle between the second portion 24 b and thebottom surface of the first electrode structure 50 (which is equal tothe base angle β of the spacer 20 a) is less than the base angle α ofthe first electrode 19 a.

In other words, the end point A of the first portion 24 a and the endpoint B of the third portion 24 c (that is, the two end points of thesecond portion 24 b contacting with the first portion 24 a and the thirdportion 24 c) are not aligned with each other in a second direction D2which is perpendicular to the first direction D1, but are laterallyoffset from each other. The sidewall of the second portion 24 b may havenon-single slope or a very gentle slope. In some embodiments, the slopeof the sidewall of the second portion 24 b may change gradually, such asincreased gradually from the end point A to the end point B.

Still referring to FIG. 2A, the second electrode structure 52 is formedon the first electrode structure 50 and is electrically isolated fromthe first electrode structure 50 by the first insulating layer 24therebetween. In some embodiments, the second electrode structure 52includes the second electrode 25 a and spacers 28 on sidewalls of thesecond electrode 25 a.

In some embodiments, the second electrode 25 a is conformal with thefirst insulating layer 24. The second electrode 25 a may be a stepstructure, and include first step portions 25 b and a second stepportion 25 c on the first step portions 25 b. The first step portions 25b are located on the third portion 24 c of the first insulating layer 24a and at sides of the first electrode structure 50. The first stepportion 25 b is an asymmetric structure. In some embodiments, thesidewalls SW1 and SW2 of the first step portion 25 b are not parallel toeach other. In some embodiments, the profile of the sidewall SW1 and thebase angle θ1 (that is, the included angle between the sidewall SW1 andthe bottom surface of the second electrode 25 a) of the second electrode25 a is similar to the profile of the sidewall 21 and the base angle αof the first electrode 19 a, respectively. The profile of the sidewallSW1 and the base angle θ1 of the second electrode 25 a may be the sameas or different from the profile of the sidewall 21 and the base angle αof the first electrode 19 a, respectively. The base angle θ1 ranges from70° to 90°, for example. In some embodiments, the sidewall SW1 isextending along the second direction D2, and is perpendicular to the topsurface of the dielectric structure 18. The sidewall SW2 is extendingalong the surface of the second portion 24 b of the first insulatinglayer 24 and has a similar profile of that of the second portion 24 b ofthe first insulating layer 24.

The second step portion 25 c is located on the first electrode structure50, the first portion 24 a of the first insulating layer 24 and thefirst step portion 25 b. In some embodiments, the cross-section shape ofthe second step portion 25 c may be trapezoid with arced sidewalls. Thewidth of the second step portion 25 c increases gradually from the topsurface to the bottom surface thereof. In some embodiments, the sidewallSW3 of the second step portion 25 c has a similar profile as that of thesecond portion 24 b of the first insulating layer 24. In someembodiments, the base angle θ2 of the second step portion 25 c is lessthan the base angle θ1 of the first step portion 25 b, the base angle β1of the spacer 20 a and the base angle α of the first electrode 19 a. Thebase angle θ2 ranges from 30° to 70°, for example. In some embodiments,the slope of the sidewall SW1 of the first step portion 25 b is steep,while the slope of the sidewall SW3 of the second step portion isgentle.

In some embodiments, the spacer 28 includes a first part 28 a and asecond part 28 b. The first part 28 a is located on the third portion 24c of the first insulating layer 24 and at a side of the first stepportion 25 b of the second electrode 25 a, covering a portion of the topsurface of the first insulating layer 24 and the sidewall SW1 of thefirst step portion 25 b. The structural features of the first part 28 aof the spacer 28 are similar to those of the spacer 20 a, which is notdescribed again. In some embodiments, the structural features of thefirst part 28 a may be the same as or different from those of the spacer20 a.

The second part 28 b is located on the first step portion 25 a and at aside of the second step portion 25 c of the second electrode 25 a,covering at least a portion of the top surface of the first step portion25 b and the sidewall SW3 of the second step portion 25 c. The baseangle β3 of the second part 28 b may be the same as or different fromthe base angel β2 of the first part 28 a. In some embodiments, the baseangle β3 is less than the base angle β2. The slope of the sidewalls ofthe second part 28 b may be gentler than that of the first part 28 a orthat of the second step portion 25 c. In some embodiments, the firstpart 28 a and the second part 28 b may be connected to each other, orseparated from each other by the first step portion 25 b.

In some embodiments, the second insulating layer 29 conformally coversthe second electrode structure 52 and the first insulating layer 24. Thesecond insulating layer 29 is separated from the sidewalls SW1 and SW3of the second electrode 25 a by the spacers 28 therebetween. The secondinsulating layer 29 includes a first portion 29 a, a second portion 29 band a third portion 29 c connected to each other. The first portion 29 ais located on the second electrode structure 52. The third portion 29 cis located on the third portion 24 c of the first insulating layer 24.The first portion 29 a and the third portion 29 c are extending alongthe first direction D1. The second portion 29 b is located on sidewallsof the spacers 28 and connects the first portion 29 a and the thirdportion 29 c. The second portion 29 b is separated from the secondelectrode 25 a by the spacers 28 therebetween. The profile of the secondportion 29 b may be arced, curved or inclined. The sidewall of thesecond portion 29 b may include a very gentle slope or non-single slope.In some embodiments, the slope of the second portion 29 b changesgradually from the end point contacting with the first portion 29 a tothe end point contacting with the third portion 29 c.

In the forgoing embodiments, spacers are formed on sidewalls of both thefirst electrode and the second electrode, but the disclosure is notlimited thereto. In some other embodiments, spacers may just be formedon sidewalls of the first electrode or sidewalls of the secondelectrode.

Referring to FIG. 2B, a MIM capacitor 100 c includes a first electrodestructure 150, a first insulating layer 124, a second electrodestructure 152, a second insulating layer 129 and a third electrodestructure 154. The structure of the MIM capacitor 100 c is similar tothe structure of the MIM capacitor 100 b, and the difference lies inthat the first electrode structure 150 does not include spacers onsidewalls of the first electrode 19 a.

Still referring to FIG. 2B, the first electrode structure 150 includesthe first electrode 19 a and no spacer is formed on the sidewalls of thefirst electrode 19 a. The top surface and the sidewalls of the firstelectrode 19 a are covered and in contact with the first insulatinglayer 124. The other structural features of the first electrode 19 a aresimilar to those described in the foregoing embodiments, and are notdescribed again.

The second electrode structure 152 includes the second electrode 125 aand the spacers 128 on sidewalls of the second electrode 125 a. As nospacer is formed on sidewalls of the first electrode 19 a, thecross-section shapes or profiles of the second electrode 125 a and thespacers 128 may be a little different from those of the second electrode25 a and spacers 28 as shown in FIG. 2A.

In some embodiments, the second electrode structure 152 has a stepstructure, including a first step portion 125 b and a second stepportion 125 c on the first step portion 125 b. The first step portion125 b may be a symmetric or an asymmetric structure. The cross-sectionshape of the first step portion 125 b may be square, rectangle,parallelogram, or the like. The sidewalls of the first step portion 125b may be straight or inclined. The base angle θ1′ of the first stepportion 125 a may be in a same range of the base angle θ1 of the firststep portion 25 b as shown in FIG. 2A. The cross-section shape of thesecond step portion 125 c may be rectangle, trapezoid, or the like. Thesidewalls of the second step portion 125 c may be straight or inclined.The base angle θ2′ of the second step portion 125 c may be the same asor less than the base angle θ1′ of the first step portion 125 b. In someembodiments, the base angle θ1′ and the base angle θ2′ range from 70° to90°, respectively. In some embodiments, the sidewalls of the first stepportion 125 b and the second step portion 125 c are parallel to eachother.

The spacers 128 may include a first part 128 a on sidewalls of the firststep portion 125 b and a second part 128 b on sidewalls of the secondstep portion 125 c. In some embodiments, the first part 128 a and thesecond part 128 b have similar cross-section shape or profile as that ofthe first part 28 a of the spacers 28 (shown in FIG. 2A). The base angleβ2′ of the first part 128 a and the base angle β3′ of the second part128 b may be the same or different. In some embodiments, the base angleβ2′ and the base angle β3′ may be less than the base angle θ1′ and thebase angle θ2′, and in a range of 45° to 60°, respectively. In theembodiments shown in FIG. 2B, the first part 128 a and the second part128 b are separated from each other by the first step portion 125 a, butthe disclosure is not limited thereto.

The second insulating layer 129 and the third electrode structure 154conformally cover the first electrode structure 152 and the firstinsulating layer 124. The third electrode structure 154 includes thethird electrode 130 a.

In this embodiment, spacers are formed between sidewalls of the secondelectrode and the second insulating layer, and are not formed onsidewalls of the first electrode. In some other embodiments, spacers maybe formed between sidewalls of the first electrode and the firstinsulating layer, and are not formed on sidewalls of the secondelectrode, and the structure of the capacitor formed will be similar tothat of the capacitor 100 b shown in FIG. 2A except for the spacers 28are not formed.

In the foregoing embodiments, the spacers on sidewalls of the electrodeshown in FIG. 2A or 2B are single-layer structure, but the disclosure isnot limited thereto. In some embodiments in which the spacer materiallayer is a multi-layer structure, the spacers on sidewalls of theelectrode may include multi-layer structure.

FIG. 2C is a schematic cross-sectional view illustrating an enlargedview of a MIM capacitor 100 d according to some embodiments of thedisclosure. The structure of the MIM capacitor 100 d is similar to thestructure of the MIM capacitor 100 b shown in FIG. 2A, except that theMIM capacitor 100 d includes a spacer having a multi-layer structure.

Referring to FIG. 2C, the MIM capacitor 100 d includes a first electrodestructure 250, a first insulating layer 24, a second electrode structure252, a second insulating layer 29, and a third electrode structure 54stacked on the dielectric structure 18. The first electrode structure250 includes a first electrode 19 a and spacers 220 on sidewalls of thefirst electrode 19 a. The second electrode structure 252 includes asecond electrode 25 a and spacers 228 on sidewalls of the secondelectrode 25 a. The third electrode structure 54 includes a thirdelectrode 30 a.

In some embodiments, the spacers 220 a and the spacers 228 may bemulti-layer structure, respectively. The spacer 220 a includes a firstspacer layer 201 and a second spacer layer 202 on the first spacer layer201. The first spacer layer 201 is located between the sidewall of thefirst electrode 19 a and the second spacer layer 202, and between thetop surface of the dielectric structure 18 and the second spacer layer202. The cross-section shape of the first spacer layer 201 may includeL-shaped or the like. The first spacer layer 201 includes a materialdifferent from the materials of the first electrode 19 a and the secondspacer layer 202. The material of the second spacer layer 202 may be thesame as or different from the material of the first electrode 19 a. Insome embodiments, the first spacer layer 201 is a dielectric layer, andthe second spacer layer 202 is a conductive layer.

Similar to the spacer 220 a, the spacer 228 includes a first spacerlayer 203 and a second spacer layer 204. The materials of the firstspacer layer 203 and the second spacer layer 204 are similar to, and maybe the same as or different from the materials of the first spacer layer201 and the second spacer layer 202, respectively. In some embodiments,the first spacer layer 203 is a dielectric layer, and the second spacerlayer 204 is a conductive layer. The first spacer layer 203 is locatedbetween the second electrode 25 a and the second spacer layer 202,or/and between the first insulating layer 24 and the second spacer layer202. The other structural features of the capacitor 100 d aresubstantially the same as the capacitor 100 b shown in FIG. 1A, which isnot described again.

In the embodiments of the disclosure, as spacers are formed on sidewallsof the electrode before the capacitor insulating layer is formed, theelectrode structure including the spacers may have sidewalls with gentleslope or changing slope. Therefore, the capacitor insulating layerformed on the electrode structure may have a uniform thickness, and thecorner thinning issue of the capacitor insulating layer is avoided, theissue of lower voltage breakdown and lower unit capacitance may becaused by the corner thinning issue are thus avoided. Therefore, thereliability of the MIM capacitor and the reliability of thesemiconductor device are thus improved, meanwhile, the density and areaof the MIM capacitor is kept.

In accordance with some embodiments of the disclosure, a MIM capacitorincludes a first electrode, a second electrode, a third electrode, afirst insulating layer, a second insulating layer, and a first spacer.The first electrode and the third electrode are electrically connectedto each other. The first insulating layer is between the first electrodeand the second electrode. The second insulating layer is between thesecond electrode and the third electrode. The first spacer is locatedbetween a sidewall of the first electrode and the first insulatinglayer.

In accordance with alternative embodiments of the disclosure, a MIMcapacitor includes a first electrode structure, a second electrodestructure and a third electrode structure stacked on a dielectricstructure, a first insulating layer, a second insulating layer, a firstcontact, and a second contact. The first insulating layer is between thefirst electrode structure and the second electrode structure. The secondinsulating layer is between the second electrode structure and the thirdelectrode structure. The first contact penetrates through andelectrically connects the first electrode structure to the thirdelectrode structure. The second contact penetrates through and iselectrically connected to the second electrode structure. At least oneof the first electrode structure and the second electrode structurecomprises a combination of a conductive material and a dielectricmaterial.

In accordance with some embodiments of the disclosure, a method ofmanufacturing a MIM capacitor includes the following steps. A firstelectrode structure is formed on a dielectric structure. A firstinsulating layer is formed on the first electrode structure. A secondelectrode structure is formed on the first insulating layer. A secondinsulating layer is formed on the second electrode structure. A thirdelectrode structure is formed on the second insulating layer. At leastone of forming the first electrode structure and forming the secondelectrode structure comprises forming an electrode and spacers onsidewalls of the electrode.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the disclosure.Those skilled in the art should appreciate that they may readily use thedisclosure as a basis for designing or modifying other processes andstructures for carrying out the same purposes and/or achieving the sameadvantages of the embodiments introduced herein. Those skilled in theart should also realize that such equivalent constructions do not departfrom the spirit and scope of the disclosure, and that they may makevarious changes, substitutions, and alterations herein without departingfrom the spirit and scope of the disclosure.

What is claimed is:
 1. A MIM capacitor, comprising: a first electrode, a second electrode and a third electrode stacked on a dielectric structure, wherein the first electrode and the third electrode are electrically connected to each other; a first insulating layer between the first electrode and the second electrode; a second insulating layer between the second electrode and the third electrode; and a first spacer, located laterally between a sidewall of the first electrode and the first insulating layer, wherein the first insulating layer comprises a portion directly contacting a top surface of the dielectric structure, and a portion of the second electrode is located on the portion of the first insulating layer and laterally aside the first electrode.
 2. The MIM capacitor of claim 1, wherein the first spacer has a first base angle less than a second base angle of the first electrode, and the first base angle is an acute angle.
 3. The MIM capacitor of claim 2, wherein the first insulating layer includes a first portion on the first electrode, a second portion on a sidewall of the first spacer and a third portion on the dielectric structure; the first portion and the third portion are extending along a first direction; the second portion is on the first spacer, located between and connects the first portion and the third portion.
 4. The MIM capacitor of claim 3, wherein the second portion includes a first end point in contact with the first portion and a second end point in contact with the third portion, the first end point and the second end point are staggered along a second direction perpendicular to the first direction.
 5. The MIM capacitor of claim 4, wherein the slope of a sidewall of the second portion of the first insulating layer changes gradually from the first end point to the second end point.
 6. The MIM capacitor of claim 1, wherein the first spacer is a single-layer structure, and comprises a dielectric material.
 7. The MIM capacitor of claim 1, wherein the first spacer is a multi-layer structure, and comprises a dielectric material and a conductive material.
 8. The MIM capacitor of claim 1, further comprising a second spacer between a sidewall of the second electrode and the second insulating layer.
 9. The MIM capacitor of claim 1, further comprising a first contact and a second contact, wherein the first contact electrically connects the first electrode to the third electrode, the second contact is electrically connected to the second electrode.
 10. A MIM capacitor, comprising: a first electrode structure, a second electrode structure and a third electrode structure stacked on a dielectric structure; a first insulating layer between the first electrode structure and the second electrode structure; a second insulating layer between the second electrode structure and the third electrode structure; a first contact, penetrating through and electrically connecting the first electrode structure to the third electrode structure; and a second contact, penetrating through and electrically connected to the second electrode structure; wherein the first electrode structure, the second electrode structure and the third electrode structure respectively comprise a conductive material, and at least one of the first electrode structure and the second electrode structure further comprises a dielectric material, wherein at least one of the first insulating layer and the second insulating layer comprises a portion laterally between the dielectric material of a corresponding electrode structure and the conductive material of another corresponding electrode structure, wherein the first electrode structure comprises a first electrode, comprising the conductive material, and first spacers on sidewalls of the first electrode, and the second electrode structure comprises a second electrode comprising the conductive material, wherein the first insulating layer comprises a part directly contacting a top surface of the dielectric structure, and a part of the second electrode is located on the part of the first insulating layer and laterally aside the first electrode, wherein a portion of the first insulating layer is separate from the first electrode by the first spacers therebetween.
 11. The MIM capacitor of claim 10, wherein a base angle of at least one of the first electrode structure and the second electrode structure is less than 90°.
 12. The MIM capacitor of claim 10, wherein a portion of a sidewall of at least one of the first insulating layer and the second insulating layer has a changing slope.
 13. The MIM capacitor of claim 10, wherein the first spacers comprise the dielectric material.
 14. The MIM capacitor of claim 10, wherein the second electrode structure comprises: the second electrode; and second spacers on sidewalls of the second electrode, wherein the second spacers comprise the dielectric material, wherein a portion of the second insulating layer is separate from the second electrode by the second spacers therebetween.
 15. The MIM capacitor of claim 10, wherein the MIM capacitor is integrated in a semiconductor device; and the first contact and the second contact further penetrate through the dielectric structure to electrically connect to a conductive line of an interconnect structure of the semiconductor device.
 16. A method of manufacturing a MIM capacitor, comprising: forming a first electrode structure on a dielectric structure, forming a first insulating layer on the first electrode structure; forming a second electrode structure on the first insulating layer; forming a second insulating layer on the second electrode structure; and forming a third electrode structure on the second insulating layer, wherein at least one of forming the first electrode structure and forming the second electrode structure comprises forming an electrode and spacers on sidewalls of the electrode, wherein the first electrode structure comprises a first electrode and a first spacer, the first spacer is located laterally between a sidewall of the first electrode and the first insulating layer, and the second electrode structure comprises a second electrode; wherein the first insulating layer comprises a portion directly contacting a top surface of the dielectric structure, and a portion of the second electrode is located on the portion of the first insulating layer and laterally aside the first electrode.
 17. The method of claim 16, wherein forming the spacers on the sidewalls of the electrode comprises: forming a spacer material layer on the electrode, wherein the spacer material layer covers a top surface and the sidewalls of the electrode; and performing an etching process on the spacer material layer to remove the spacer material layer on the top surface of the electrode and remain the spacers on the sidewalls of the electrode.
 18. The method of claim 17, wherein forming the spacer material layer comprises forming a dielectric layer and a conductive layer on the dielectric layer; and the dielectric layer serves as an etching stop layer during the etching process.
 19. The method of claim 16, further comprising forming a first contact to penetrate through and electrically connect to the third electrode structure and the first electrode structure, and forming a second contact to penetrate through and electrically connect to the second electrode structure.
 20. The method of claim 19, wherein the dielectric structure is formed on a conductive line of a semiconductor device, and the first contact and the second contact further penetrate through the dielectric structure to electrically connect to the conductive line, wherein the first contact and the second contact are electrically isolated from each other. 